| PART |
Description |
Maker |
| LM4050AEM3-3.0-T LM4050AEX3-3.0-T LM4050AEM3-4.1-T |
50ppm/C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages
50ppm/∑C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PDSO3
|
Maxim Integrated Products, Inc.
|
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| R2M |
OVER VOLTAGE PROTACTION DIODE BREAKDOWN VOLTAGE: 135-150V REVERSE SURGE CURRENT: 1A
|
SSE[Shanghai Sunrise Electronics]
Shanghai Sunrise Electronics Co., LTD.
|
| 1N6267 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W
|
Shanghai Sunrise Electronics
|
| 2SA1257 |
High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V
|
TY Semiconductor Co., Ltd
|
| EE2-5NU EE2-12NUX-R EE2-12NUX-L EE2-12NUX EE2-12NU |
POWER/SIGNAL RELAY, DPDT, LATCHED, 12VDC (COIL), 2A (CONTACT), 220VDC (CONTACT), SURFACE MOUNT-STRAIGHT
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type
Compact and lightweight High breakdown voltage Surface mounting type
Replaced by PCM1602A : 105dB SNR 6-Channel Audio DAC 48-LQFP
OSC 5V SMT PLAS 14X9 CMOS
105dB SNR 8-Channel Audio DAC 28-SSOP/QSOP -25 to 70
Replaced by PCM1754 : 97dB SNR Stereo DAC 14-SOIC
Replaced by PCM1609A : 105dB SNR 8-Channel Audio DAC 48-LQFP
105dB SNR 8-Channel Audio DAC 48-LQFP -25 to 85
Serial Interrupt Stream Deserializer 48-LQFP
Compact and lightweight, High breakdown voltage, Surface mounting type 小巧轻盈，击穿电压高，表面安装型
Replaced by PCM1798 : 106dB SNR Stereo DAC 28-SSOP 小巧轻盈，击穿电压高，表面安装型
Compact and lightweight/ High breakdown voltage/ Surface mounting type
|
NEC TOKIN CORP
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| 1.5SMC350A 1.5SMC170A 1.5SMC62A 1.5SMC130A 1.5SMC4 |
Surface Mount Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 550V
|
GOOD-ARK Electronics
|
| RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS RD18JS R |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode
8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
surface mount silicon Zener diodes 表面贴装硅稳压二极管
DO-34 Package Low noise/ Sharp Breakdown characteristics 400 mW Zener Diode
DO-34 Package Low noise Sharp Breakdown characteristics 400 mW Zener Diode
Constant Voltage diode 400mW DO-34
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HDS20U30GW |
High Breakdown Voltage
|
SemiHow Co.,Ltd.
|
| LVA492A LVA495A LVA498A LVA483A LVA486A LVA477A LV |
SHARP BREAKDOWN, LOW LEAKAGE LVA REGULATOR DIODES 夏普击穿，低泄漏左右椎稳压二极管
SHARP BREAKDOWN/ LOW LEAKAGE LVA REGULATOR DIODES
Crimp Socket Contact; Wire Size (AWG):24-20; Contact Current:5A; Gender:Female; Voltage Rating:250V RoHS Compliant: Yes
|
Knox Semiconductor Inc
Knox Semiconductor, Inc
Knox Semiconductor Inc
|
| 2SD814 2SD814A 2SD0814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
